Modeling and Prediction of Common Mode Electromagnetic Interference in GaN-Based Switching Power Converters

Behavioral models of common mode (CM) electromagnetic interference (EMI) are proposed herein for a GaN high-electron-mobility transistor (HEMT) synchronous buck converter. First, CM noise model is developed using linear equivalent circuit that consists voltage source, current and two impedances. The behavioral parameters the then extracted by changing input-side shunt A HEMT converter setup built switching frequencies 100 kHz, 200 500 kHz to verify validity EMI model. comparison between experimental predicted results indicated GaN-based power converters was able predict well in 150 kHz–30 MHz frequency range.